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Kioxia Sampling UFS 5.0 Embedded Flash Memory Devices for Next-Generation Mobile Applications

  • 김민준 기자
  • 입력 2026.02.26 15:10
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  • Enhanced interface speed enables high-performance on-device AI features in smartphones
UFS 5.0 Embedded Flash Memory Devices
Kioxia Corporation (https://www.kioxia.com/en-jp/top.html), a world leader in memory solutions, today announced that it has begun shipping evaluation samples[1] of embedded flash memory compatible with the next-generation UFS standard, UFS 5.0, which is currently being standardized by JEDEC.[2]

UFS 5.0 is a new standard for embedded flash storage currently being developed by JEDEC to meet the performance requirements of next-generation mobile devices such as high-end smartphones equipped with on-device AI functions. It utilizes MIPI M-PHY version 6.0 for the physical layer and UniPro version 3.0 for the protocol. M-PHY version 6.0 introduces the new HS-GEAR6 mode, theoretically supporting an interface speed of up to 46.6 Gbps per lane; with 2 lanes, UFS 5.0 can achieve approximately 10.8 GB/s of effective read/write performance.

The evaluation samples incorporate an in-house newly developed controller for UFS 5.0 and Kioxia’s 8th-generation BiCS FLASH™, and are available in capacities of 512 GB and 1 TB. The package has been newly designed with a small 7.5 x 13 mm size, contributing to board space efficiency and design flexibility.

The samples are provided to customers who are developing UFS 5.0-compatible host systems, enabling them to evaluate performance and conduct interoperability testing.

Kioxia will continue to introduce new flash memory technologies into its UFS products to meet the increasing demands for larger capacity and higher performance in the mobile market.

Notes:

[1] These samples are intended for functional evaluation only. Specifications of the samples will differ from commercial products.
[2] Shipments of 512 GB evaluation samples began on February 24, and shipments of 1 TB samples are scheduled to start from March onwards.

· In every mention of a Kioxia product: Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications. The definition of 1 KB = 2^10 bytes = 1,024 bytes. The definition of 1 Gb = 2^30 bits = 1,073,741,824 bits. The definition of 1 GB = 2^30 bytes = 1,073,741,824 bytes. 1 Tb = 2^40 bits = 1,099,511,627,776 bits.

· 1 Gbps is calculated as 1,000,000,000 bits/s and 1 GB/s is calculated as 1,000,000,000 bytes/s.

· Company names, product names and service names may be trademarks of third-party companies.

About Kioxia

Kioxia is a world leader in memory solutions, dedicated to the development, production and sale of flash memory and solid-state drives (SSDs). In April 2017, its predecessor Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Kioxia is committed to uplifting the world with “memory” by offering products, services and systems that create choice for customers and memory-based value for society. Kioxia's innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, automotive systems, data centers and generative AI systems.

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

View source version on businesswire.com: https://www.businesswire.com/news/home/20260220218622/en/

언론연락처: Kioxia Corporation Satoshi Shindo Promotion Management Division +81-3-6478-2404

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